10N60 Datasheet PDF - Inchange Semiconductor
10N65 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-588.G ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 30 V Avalanche Current (Note 2) IAR 10 A Drain Current. 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET, 10N60 datasheet, 10N60 circuit, 10N60 data sheet: UTC, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 TO-220F charge, minimized on-state resistance and withstanding high energy. N-CHANNEL POWER MOSFET: Inchange Semiconductor. 10N60: isc N-Channel MOSFET Transistor: VBsemi Electronics Co. 10N60: N-Channel 650V (D-S) Power MOSFET: Jiangsu Donghai Semicon. 10N60: 10A 600V N-channel Enhancement Mode Power MOSFET: 10N60: 10A 600V N-channel Enhancement Mode Power MOSFET: DONGGUAN YOU FENG WEI E. 10N60A 10A 600V N.
| Part Number | 10N60 | |
| Description | N-Channel Mosfet Transistor | |
| Manufacturers | Inchange Semiconductor | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 2 pages ) | ||
Preview 1 page No Preview Available ! isc N-Channel Mosfet Transistor 10N60 ·Drain Current –ID= 9.2A@ TC=25℃ : VDSS= 650V(Min) : RDS(on) = 0.83Ω(Max) ·Fast Switching ·DESCRITION ·Designed for high efficiency switch mode power supply. SYMBOL VALUE VDSS Drain-Source Voltage 650 V ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ SYMBOL MAX UNIT Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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10N60 Datasheet(PDF) - Unisonic Technologies
10N60 Datasheet PDF - CHONGQING PINGYANG
| Part Number | 10N60 | |
| Description | N-CHANNEL MOSFET | |
| Manufacturers | CHONGQING PINGYANG | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 2 pages ) | ||
Mosfet 10n60l
Preview 1 page No Preview Available ! 10A mps,600 Volts N-CHANNEL MOSFET 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low Ciss 100% avalanche tested TO-220AB ITO-220AB TO-263 TO-262 Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Symbol Gate-Source Voltage Pulsed Drain Current(Note1) Avalanche Current(Note1) Reverse Diode dV/dt (Note 3) Maximum lead temperature for soldering purposes, VDSS ID EAS EAR TJ,TSTG Mounting Torque 10N60 ±30 40 10 5.5 260 1.1 V mJ mJ ℃ lbf·in Thermal Characteristics Maximum Junction-to-Case TC=25℃ RthJC ITO-220 125 TO-220 155 TO-263 155 ℃/W Rev. 14-1 |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
Share Link :
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Mosfet 100n04
Featured Datasheets
Mosfet 10n60f
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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